course: Plasma Technology for Semiconductor Manufacturing

number:
141364
teaching methods:
lecture with tutorials
media:
computer based presentation
responsible person:
Prof. Dr. Ralf Peter Brinkmann
lecturer:
Dr. Michael Klick (extern)
language:
german
HWS:
3
CP:
4
offered in:
winter term

dates in winter term

  • lecture with integrated tutorials: Monday the 04.10.2021 from 09:00 to 17.00 o'clock in ID 04/401
  • lecture with integrated tutorials: Tuesday the 05.10.2021 from 09:00 to 17.00 o'clock in ID 04/401
  • lecture with integrated tutorials: Wednesday the 06.10.2021 from 09:00 to 17.00 o'clock in ID 04/401
  • lecture with integrated tutorials: Thursday the 07.10.2021 from 09:00 to 17.00 o'clock in ID 04/401
  • lecture with integrated tutorials: Friday the 08.10.2021 from 09:00 to 17.00 o'clock in ID 04/401

Exam

Date according to prior agreement with lecturer.

Form of exam:oral
Registration for exam:Directly with the lecturer
Duration:30min

goals

The students got to know the theoretical and practical aspects of the application of plasma technology in semiconductor and microsystem technology.

content

  1. General Introduction
  • Semiconductor Market
  • The top Plasma Equipment Suppliers
  • Analysis and Control of Manufacturing Costs
  • Demands and Conclusions for future Plasma Equipment
  1. Plasma physics fundamentals
  • Plasma - The fourth state of matter
  • Plasma and external magnetic field
  • Short characterization of non­thermal plasma
  • The mechanisms in the DC discharge
  • RF discharge
  • CCP ­ Capacitively Coupled Plasma
  • Inductively Coupled Plasma
  • Remote and pulsed plasmas
  • RF power in the plasma
  • Plasma process control in the Fab
  • Methods of plasma diagnostics
  1. Plasma Etch Tools
  • The plasma process Overview - Reactor types, Classical parallel plate reactor
  • Capacitively Coupled Plasma reactor type (RIE)
  • Typical parameters of RIE, Control of bulk and sheath by dissipated power
  • Basic etching in MERIE reactor type
  • Approach to Dual Frequency Reactors
  • Approach to and principle of ICP / TCP®
  • Comparison of chamber type; Process requirements and equipment, Common materials and corresponding etching gas
  • Etch chemistry
  • Sputtering
  1. Principle of thin film deposition, PVD & CVD: Sputter deposition
  • The plasma enhanced deposition
  • Nitridation
  1. Process
  • Basic mechanisms: Plasma processes
  • The complexity of plasma processing
  • Mechanism of plasma processes
  • Limitations of plasma processes
  • Gas heating
  • PECVD: Surface and bulk (volume) reactions
  • Conditioning
  • Chamber Design
  • Arcing and particles
  • Cost control by quality and process management

requirements

keine

recommended knowledge

Necessary: Basics of e-technology, Electric and magnetic fields

Helpful is the visit of the following lectures: Plasma technology and Fields, waves, particles

miscellaneous

The lesson will take place as a block course from October 4th till October 8th 2021.